semix703gal126hds ? by semikron rev. 16 ? 16.12.2009 1 semix ? 3s gal trench igbt modules semix703gal126hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ? ac inverter drives ?ups ? electronic welding remarks ? case temperatur limited to t c =125c max. ? not for new design absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 150 c t c =25c 642 a t c =80c 449 a i cnom 450 a i crm i crm = 2xi cnom 900 a v ges -20 ... 20 v t psc v cc = 600 v v ge 20 v v ces 1200 v t j = 125 c 10 s t j -40 ... 150 c inverse diode i f t j = 150 c t c =25c 561 a t c =80c 384 a i fnom 450 a i frm i frm = 2xi fnom 900 a i fsm t p = 10 ms, sin 180, t j =25c 2900 a t j -40 ... 150 c freewheeling diode i f t j = 150 c t c =25c 561 a t c =80c 384 a i fnom 450 a i frm i frm = 2xi fnom 900 a i fsm t p = 10 ms, sin 180, t j =25c 2900 a t j -40 ... 150 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =450a v ge =15v chiplevel t j =25c 1.7 2.1 v t j = 125 c 22.45v v ce0 t j =25c 11.2v t j = 125 c 0.9 1.1 v r ce v ge =15v t j =25c 1.6 2.0 m ? t j = 125 c 2.4 3.0 m ? v ge(th) v ge =v ce , i c =18ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j = 125 c ma c ies v ce =25v v ge =0v f=1mhz 32.3 nf c oes f=1mhz 1.69 nf c res f=1mhz 1.46 nf q g v ge =- 8 v...+ 15 v 3600 nc r gint t j =25c 1.67 ?
semix703gal126hds 2 rev. 16 ? 16.12.2009 ? by semikron t d(on) v cc = 600 v i c =450a r g on =1.6 ? r g off =1.6 ? t j = 125 c 310 ns t r t j = 125 c 60 ns e on t j = 125 c 32 mj t d(off) t j = 125 c 680 ns t f t j = 125 c 135 ns e off t j = 125 c 68 mj r th(j-c) per igbt 0.061 k/w inverse diode v f = v ec i f =450a v ge =0v chip t j =25c 1.6 1.80 v t j = 125 c 1.6 1.8 v v f0 t j =25c 0.9 1 1.1 v t j = 125 c 0.7 0.8 0.9 v r f t j =25c 1.1 1.3 1.6 m ? t j = 125 c 1.6 1.8 2.0 m ? i rrm i f =450a di/dt off = 8500 a/s v ge =-15v v cc = 600 v t j = 125 c 580 a q rr t j = 125 c 130 c e rr t j = 125 c 60 mj r th(j-c) per diode 0.11 k/w freewheeling diode v f = v ec i f =450a v ge =0v chip t j =25c 1.6 1.8 v t j = 125 c 1.6 1.8 v v f0 t j =25c 0.9 1 1.1 v t j = 125 c 0.7 0.8 0.9 v r f t j =25c 1.1 1.3 1.6 m ? t j = 125 c 1.6 1.8 2.0 m ? i rrm i f =450a di/dt off = 8500 a/s v ge =-15v v cc = 600 v t j = 125 c 580 a q rr t j = 125 c 130 c e rr t j = 125 c 60 mj r th(j-c) per diode 0.11 k/w module l ce 20 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c = 125 c 1m ? r th(c-s) per module 0.04 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 300 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k characteristics symbol conditions min. typ. max. unit semix ? 3s gal trench igbt modules semix703gal126hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ? ac inverter drives ?ups ? electronic welding remarks ? case temperatur limited to t c =125c max. ? not for new design
semix703gal126hds ? by semikron rev. 16 ? 16.12.2009 3 fig. 1: typ. output ch aracteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
semix703gal126hds 4 rev. 16 ? 16.12.2009 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching times vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
semix703gal126hds ? by semikron rev. 16 ? 16.12.2009 5 semix 3s spring configuration
semix703gal126hds 6 rev. 16 ? 16.12.2009 ? by semikron this technical information specifies semiconductor devices. no warranty or guarantee expressed or implied is made regarding del ivery, performance or suitability.
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